General Information Edit

Introduction to the operation, physics, and application of power semiconductor devices. Emphasizes concepts of breakdown and device optimization, including the use of SiC and GaN as alternatives to Si. Devices are simulated for better understanding.

Prerequisites Edit

ECE 3150

Topics Covered Edit

  • Material and Transport Physics
  • Device Breakdown
  • Conductivity Modulation
  • Schottky Diodes
  • PiN Rectifiers
  • Power MOSFETs
  • SCRs, Triacs, GTOs
  • IGBTs

Workload Edit

  • SP16: 5 Homework assignments, 4 lab assignments, 1 take-home final

Advice Edit

The course material can be quite difficult but Spencer does a good job of covering the major points while pushing the practice of concepts to HWs. However, that may be a little too equation heavy in that the homeworks can end up being an equation scavenger hunt from the 1000+ page book. Most references online end up referencing the same book by Baliga. There are LOTS of formulas (400+ in the IGBT chapter, although a lot are redundant). The final is very concept-heavy though and is probably the most helpful assignment in the course. Spencer is very approachable and understanding, although it is very easy to get lost in class.

Past Offerings Edit

Semester Time Professor Median Grade
Spring 2016

TR 11.25AM-12.40PM

Michael Spencer ?
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